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Direct synthesis of RGO/Cu2O composite films on Cu foil for supercapacitors

机译:超级电容器在铜箔上直接合成RGO / Cu2O复合膜

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摘要

Reduced graphene oxide/cuprous oxide (RGO/Cu2O) composite films were directly synthesized on the surface of copper foil substrates through a straight redox reaction between GO and Cu foil via a hydrothermal approach. Characterization of the resultant composites with X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, and field emission scanning electron microscope (FESEM) confirms the formation of Cu2O and reduction of GO, in which Cu2O nanoparticles were well covered by RGO. The resultant composites (referred to as RGO/Cu2O/Cu) were directly used as electrodes for supercapacitors, and their electrochemical performance was assessed by cyclic voltammetry (CV), galvanostatic charge–discharge (GCD), and electrochemical impedance spectrometry (EIS) in 1 M KOH aqueous solution. A specific capacitance of 98.5 F g−1 at 1 A g−1 was obtained, which is much higher than that of pure Cu2O prepared under the same conditions, due to the presence of RGO.
机译:通过GO和Cu箔之间的直接氧化还原反应,通过水热方法,在铜箔基板的表面上直接合成了还原型氧化石墨烯/氧化亚铜(RGO / Cu2O)复合膜。用X射线衍射,拉曼光谱,X射线光电子能谱和场发射扫描电子显微镜(FESEM)对所得复合材料进行表征,证实了Cu2O的形成和GO的还原,其中RGO很好地覆盖了Cu2O纳米颗粒。所得的复合材料(称为RGO / Cu2O / Cu)直接用作超级电容器的电极,并通过循环伏安法(CV),恒电流充放电(GCD)和电化学阻抗谱(EIS)评估了它们的电化学性能。 1 M KOH水溶液。由于存在RGO,在1 A g-1下获得的比电容为98.5 F g-1,比​​在相同条件下制备的纯Cu2O的比电容高得多。

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